Saturday, 06 September 2008

Korean firm Samsung Electronics Co. today announced it has begun mass-producing 4Gb NAND Flash device that are high in density and will be produced using a 70nm process technology.

The 70nm 4Gb NAND flash will write data at 16MB/sec, which depicts a 50 percent enhancement over its 90m 2Gb predecessor. According to various reports, this is the smallest memory cell currently in the market.

Market research firm Gartner said 4Gb NAND flash will account for nearly 30 percent or $8 billion of all market sales by the end of this year.


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